Design of a highly efficient 2–4-GHz octave bandwidth GaN-HEMT power amplifier P Saad, C Fager, H Cao, H Zirath, K Andersson
IEEE Transactions on Microwave Theory and Techniques 58 (7), 1677-1685, 2010
205 2010 Symmetrical Doherty power amplifier with extended efficiency range M Özen, K Andersson, C Fager
IEEE Transactions on Microwave Theory and Techniques 64 (4), 1273-1284, 2016
167 2016 Design of a concurrent dual-band 1.8–2.4-GHz GaN-HEMT Doherty power amplifier P Saad, P Colantonio, L Piazzon, F Giannini, K Andersson, C Fager
IEEE Transactions on microwave theory and techniques 60 (6), 1840-1849, 2012
162 2012 Large-signal modelling and comparison of AlGaN/GaN HEMTs and SiC MESFETs I Angelov, K Andersson, D Schreurs, D Xiao, N Rorsman, V Desmaris, ...
2006 Asia-Pacific Microwave Conference, 279-282, 2006
118 2006 Fabrication and characterization of field-plated buried-gate SiC MESFETs K Andersson, M Sudow, PA Nilsson, E Sveinbjornsson, H Hjelmgren, ...
IEEE electron device letters 27 (7), 573-575, 2006
94 2006 An AlGaN/GaN HEMT-based microstrip MMIC process for advanced transceiver design M Sudow, M Fagerlind, M Thorsell, K Andersson, N Billstrom, PÅ Nilsson, ...
IEEE Transactions on Microwave Theory and Techniques 56 (8), 1827-1833, 2008
78 2008 An inverse class-F GaN HEMT power amplifier with 78% PAE at 3.5 GHz P Saad, HM Nemati, M Thorsell, K Andersson, C Fager
2009 European Microwave Conference (EuMC), 496-499, 2009
75 2009 Analysis of nonlinear distortion in phased array transmitters C Fager, K Hausmair, K Buisman, K Andersson, E Sienkiewicz, ...
2017 Integrated Nonlinear Microwave and Millimetre-wave Circuits Workshop …, 2017
67 2017 Thermal study of the high-frequency noise in GaN HEMTs M Thorsell, K Andersson, M Fagerlind, M Sudow, PA Nilsson, N Rorsman
IEEE Transactions on Microwave Theory and Techniques 57 (1), 19-26, 2008
57 2008 An X-band AlGaN/GaN MMIC receiver front-end M Thorsell, M Fagerlind, K Andersson, N Billstrom, N Rorsman
IEEE Microwave and Wireless Components Letters 20 (1), 55-57, 2009
55 2009 An SiC MESFET-based MMIC process M Sudow, K Andersson, N Billstrom, J Grahn, H Hjelmgren, J Nilsson, ...
IEEE transactions on microwave theory and techniques 54 (12), 4072-4078, 2006
48 2006 Fast Multiharmonic Active Load–Pull System With Waveform Measurement Capabilities M Thorsell, K Andersson
IEEE Transactions on Microwave Theory and Techniques 60 (1), 149-157, 2012
41 2012 A Single-Ended Resistive M Sudow, K Andersson, M Fagerlind, M Thorsell, PA Nilsson, N Rorsman
Microwave Theory and Techniques, IEEE Transactions on 56 (10), 2201-2206, 2008
41 2008 C-band linear resistive wide bandgap FET mixers K Andersson, V Desmaris, J Eriksson, N Rorsman, H Zirath
IEEE MTT-S International Microwave Symposium Digest, 2003 2, 1303-1306, 2003
38 2003 A 24–28-GHz Doherty power amplifier with 4-W output power and 32% PAE at 6-dB OPBO in 150-nm GaN technology M Bao, D Gustafsson, R Hou, Z Ouarch, C Chang, K Andersson
IEEE Microwave and Wireless Components Letters 31 (6), 752-755, 2021
36 2021 Branch-Line Coupler Design Operating in Four Arbitrary Frequencies L Piazzon, P Saad, P Colantonio, F Giannini, K Andersson, C Fager
IEEE Microwave and Wireless Components Letters 22 (2), 67-69, 2012
35 2012 Transient simulation of microwave SiC MESFETs with improved trap models H Hjelmgren, F Allerstam, K Andersson, PÅ Nilsson, N Rorsman
IEEE transactions on electron devices 57 (3), 729-732, 2010
35 2010 Electrothermal access resistance model for GaN-based HEMTs M Thorsell, K Andersson, H Hjelmgren, N Rorsman
IEEE Transactions on Electron Devices 58 (2), 466-472, 2010
34 2010 A general statistical equivalent-circuit-based de-embedding procedure for high-frequency measurements M Ferndahl, C Fager, K Andersson, P Linner, HO Vickes, H Zirath
IEEE Transactions on Microwave Theory and Techniques 56 (12), 2692-2700, 2008
34 2008 Concurrent dual-band GaN-HEMT power amplifier at 1.8 GHz and 2.4 GHz P Saad, P Colantonio, J Moon, L Piazzon, F Giannini, K Andersson, B Kim, ...
WAMICON 2012 IEEE Wireless & Microwave Technology Conference, 1-5, 2012
33 2012 
Niklas RorsmanResearch Professor, Chalmers University of TechnologyBestätigte E-Mail-Adresse bei chalmers.se
