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Ganesh Balakrishnan
Ganesh Balakrishnan
Professor, ECE UNM, Director NM EPSCoR
Bestätigte E-Mail-Adresse bei unm.edu - Startseite
Titel
Zitiert von
Zitiert von
Jahr
Strain relief by periodic misfit arrays for low defect density GaSb on GaAs
SH Huang, G Balakrishnan, A Khoshakhlagh, A Jallipalli, LR Dawson, ...
Applied physics letters 88 (13), 2006
3192006
Light-emitting metasurfaces: simultaneous control of spontaneous emission and far-field radiation
S Liu, A Vaskin, S Addamane, B Leung, MC Tsai, Y Yang, ...
Nano letters 18 (11), 6906-6914, 2018
1782018
Optically pumped frequency reconfigurable antenna design
Y Tawk, AR Albrecht, S Hemmady, G Balakrishnan, CG Christodoulou
IEEE antennas and wireless propagation letters 9, 280-283, 2010
1732010
Interfacial misfit array formation for GaSb growth on GaAs
S Huang, G Balakrishnan, DL Huffaker
Journal of Applied Physics 105 (10), 2009
1422009
Demonstration of a cognitive radio front end using an optically pumped reconfigurable antenna system (OPRAS)
Y Tawk, J Costantine, S Hemmady, G Balakrishnan, K Avery, ...
IEEE Transactions on Antennas and Propagation 60 (2), 1075-1083, 2011
1362011
III/V ratio based selectivity between strained Stranski-Krastanov and strain-free GaSb quantum dots on GaAs
G Balakrishnan, J Tatebayashi, A Khoshakhlagh, SH Huang, A Jallipalli, ...
Applied physics letters 89 (16), 2006
1142006
wavelength InAs quantum dashes grown on a GaAs substrate using a metamorphic buffer layer
G Balakrishnan, S Huang, TJ Rotter, A Stintz, LR Dawson, KJ Malloy, ...
Applied physics letters 84 (12), 2058-2060, 2004
1082004
Effect of dislocation density on thermal boundary conductance across GaSb/GaAs interfaces
PE Hopkins, JC Duda, SP Clark, CP Hains, TJ Rotter, LM Phinney, ...
Applied Physics Letters 98 (16), 2011
992011
Growth mechanisms of highly mismatched AlSb on a Si substrate
G Balakrishnan, S Huang, LR Dawson, YC Xin, P Conlin, DL Huffaker
Applied Physics Letters 86 (3), 2005
942005
Atomistic modeling of strain distribution in self-assembled interfacial misfit dislocation (IMF) arrays in highly mismatched III–V semiconductor materials
A Jallipalli, G Balakrishnan, SH Huang, A Khoshakhlagh, LR Dawson, ...
Journal of Crystal Growth 303 (2), 449-455, 2007
892007
Simultaneous interfacial misfit array formation and antiphase domain suppression on miscut silicon substrate
SH Huang, G Balakrishnan, A Khoshakhlagh, LR Dawson, DL Huffaker
Applied Physics Letters 93 (7), 2008
882008
Mid-infrared InAs/GaSb strained layer superlattice detectors with nBn design grown on a GaAs substrate
E Plis, JB Rodriguez, G Balakrishnan, YD Sharma, HS Kim, T Rotter, ...
Semiconductor Science and Technology 25 (8), 085010, 2010
872010
Single-mode lasing of GaN nanowire-pairs
H Xu, JB Wright, TS Luk, JJ Figiel, K Cross, LF Lester, G Balakrishnan, ...
Applied Physics Letters 101 (11), 2012
862012
Self-Organized Formation of Quantum Rings
R Timm, H Eisele, A Lenz, L Ivanova, G Balakrishnan, DL Huffaker, ...
Physical review letters 101 (25), 256101, 2008
812008
Lasing characteristics of GaSb∕ GaAs self-assembled quantum dots embedded in an InGaAs quantum well
J Tatebayashi, A Khoshakhlagh, SH Huang, G Balakrishnan, LR Dawson, ...
Applied Physics Letters 90 (26), 2007
722007
Structural analysis of highly relaxed GaSb grown on GaAs substrates with periodic interfacial array of 90 misfit dislocations
A Jallipalli, G Balakrishnan, SH Huang, TJ Rotter, K Nunna, BL Liang, ...
Nanoscale research letters 4, 1458-1462, 2009
692009
Selective area growth of InAs quantum dots formed on a patterned GaAs substrate
S Birudavolu, N Nuntawong, G Balakrishnan, YC Xin, S Huang, SC Lee, ...
Applied physics letters 85 (12), 2337-2339, 2004
682004
Controlled InAs quantum dot nucleation on faceted nanopatterned pyramids
PS Wong, G Balakrishnan, N Nuntawong, J Tatebayashi, DL Huffaker
Applied Physics Letters 90 (18), 2007
652007
Formation and optical characteristics of strain-relieved and densely stacked GaSb∕ GaAs quantum dots
J Tatebayashi, A Khoshakhlagh, SH Huang, LR Dawson, G Balakrishnan, ...
Applied Physics Letters 89 (20), 2006
632006
Room-temperature optically pumped (Al) GaSb vertical-cavity surface-emitting laser monolithically grown on an Si (1 0 0) substrate
G Balakrishnan, A Jallipalli, P Rotella, S Huang, A Khoshakhlagh, ...
IEEE Journal of Selected Topics in Quantum Electronics 12 (6), 1636-1641, 2006
612006
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