Excess avalanche noise in In0. 52Al0. 48As YL Goh, ARJ MARSHALL, DJ Massey, JS Ng, CH Tan, M Hopkinson
IEEE journal of quantum electronics 43 (5-6), 503-507, 2007
103 2007 Temperature dependence of avalanche breakdown in InP and InAlAs LJJ Tan, DSG Ong, JS Ng, CH Tan, SK Jones, Y Qian, JPR David
IEEE Journal of Quantum Electronics 46 (8), 1153-1157, 2010
94 2010 Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes ARJ Marshall, CH Tan, MJ Steer, JPR David
Applied Physics Letters 93 (11), 2008
83 2008 Avalanche multiplication in InAlAs YL Goh, DJ Massey, ARJ Marshall, JS Ng, CH Tan, WK Ng, GJ Rees, ...
IEEE Transactions on Electron Devices 54 (1), 11-16, 2006
81 2006 Extremely low excess noise and high sensitivity AlAs0.56 Sb0.44 avalanche photodiodes X Yi, S Xie, B Liang, LW Lim, JS Cheong, MC Debnath, DL Huffaker, ...
Nature Photonics 13 (10), 683-686, 2019
80 2019 Avalanche noise characteristics in submicron InP diodes LJJ Tan, JS Ng, CH Tan, JPR David
IEEE Journal of Quantum Electronics 44 (4), 378-382, 2008
80 2008 Avalanche noise measurement in thin Si diodes CH Tan, JC Clark, JPR David, GJ Rees, SA Plimmer, RC Tozer, ...
Applied Physics Letters 76 (26), 3926-3928, 2000
77 2000 Material considerations for avalanche photodiodes JPR David, CH Tan
IEEE Journal of selected topics in quantum electronics 14 (4), 998-1009, 2008
67 2008 Impact ionization in InAs electron avalanche photodiodes ARJ Marshall, JPR David, CH Tan
IEEE Transactions on Electron Devices 57 (10), 2631-2638, 2010
66 2010 Extremely low excess noise in InAs electron avalanche photodiodes ARJ Marshall, CH Tan, MJ Steer, JPR David
IEEE Photonics Technology Letters 21 (13), 866-868, 2009
63 2009 Field dependence of impact ionization coefficients in In/sub 0.53/Ga/sub 0.47/As JS Ng, CH Tan, JPR David, G Hill, GJ Rees
IEEE Transactions on Electron Devices 50 (4), 901-905, 2003
62 2003 Temperature dependence of leakage current in InAs avalanche photodiodes PJ Ker, ARJ Marshall, AB Krysa, JPR David, CH Tan
IEEE Journal of quantum electronics 47 (8), 1123-1128, 2011
60 2011 Effect of dead space on avalanche speed [APDs] JS Ng, CH Tan, BK Ng, PJ Hambleton, JPR David, GJ Rees, AH You, ...
IEEE Transactions on Electron Devices 49 (4), 544-549, 2002
58 2002 Low multiplication noise thin Al/sub 0.6/Ga/sub 0.4/As avalanche photodiodes CH Tan, JPR David, SA Plimmer, GJ Rees, RC Tozer, R Grey
IEEE Transactions on Electron Devices 48 (7), 1310-1317, 2001
57 2001 Demonstration of InAsBi photoresponse beyond 3.5 μm IC Sandall, F Bastiman, B White, R Richards, D Mendes, JPR David, ...
Applied Physics Letters 104 (17), 2014
55 2014 Excess noise measurement in avalanche photodiodes using a transimpedance amplifier front-end KS Lau, CH Tan, BK Ng, KF Li, RC Tozer, JPR David, GJ Rees
Measurement science and technology 17 (7), 1941, 2006
52 2006 InAs thermophotovoltaic cells with high quantum efficiency for waste heat recovery applications below 1000 C Q Lu, X Zhou, A Krysa, A Marshall, P Carrington, CH Tan, A Krier
Solar Energy Materials and Solar Cells 179, 334-338, 2018
51 2018 High speed InAs electron avalanche photodiodes overcome the conventional gain-bandwidth product limit ARJ Marshall, PJ Ker, A Krysa, JPR David, CH Tan
Optics express 19 (23), 23341-23349, 2011
51 2011 InGaAs/AlGaAsSb avalanche photodiode with high gain-bandwidth product S Xie, X Zhou, S Zhang, DJ Thomson, X Chen, GT Reed, JS Ng, CH Tan
Optics express 24 (21), 24242-24247, 2016
48 2016 Avalanche multiplication and excess noise in InAs electron avalanche photodiodes at 77 K ARJ Marshall, P Vines, PJ Ker, JPR David, CH Tan
IEEE Journal of Quantum Electronics 47 (6), 858-864, 2011
46 2011