| Synthesis of nickel oxide nanoparticles using nickel acetate and poly (vinyl acetate) precursor N Dharmaraj, P Prabu, S Nagarajan, CH Kim, JH Park, HY Kim Materials Science and Engineering: B 128 (1-3), 111-114, 2006 | 264 | 2006 |
| Point defects induced work function modulation of β-Ga2O3 BR Tak, S Dewan, A Goyal, R Pathak, V Gupta, AK Kapoor, S Nagarajan, ... Applied Surface Science 465, 973-978, 2019 | 77 | 2019 |
| Nanocrystalline ZnO particles: Low-temperature solution approach from a single molecular precursor P Uthirakumar, B Karunagaran, S Nagarajan, EK Suh, CH Hong Journal of crystal growth 304 (1), 150-157, 2007 | 51 | 2007 |
| Correlation of growth temperature with stress, defect states and electronic structure in an epitaxial GaN film grown on c-sapphire via plasma MBE S Krishna, N Aggarwal, M Mishra, KK Maurya, S Singh, N Dilawar, ... Physical Chemistry Chemical Physics 18 (11), 8005-8014, 2016 | 36 | 2016 |
| Investigation of significantly high barrier height in Cu/GaN Schottky diode M Garg, A Kumar, S Nagarajan, M Sopanen, R Singh AIP Advances 6 (1), 2016 | 35 | 2016 |
| Quantitative imaging of anti-phase domains by polarity sensitive orientation mapping using electron backscatter diffraction G Naresh-Kumar, A Vilalta-Clemente, H Jussila, A Winkelmann, G Nolze, ... Scientific Reports 7 (1), 10916, 2017 | 27 | 2017 |
| Significant improvement in the electrical characteristics of Schottky barrier diodes on molecularly modified Gallium Nitride surfaces M Garg, TR Naik, CS Pathak, S Nagarajan, VR Rao, R Singh Applied Physics Letters 112 (16), 2018 | 26 | 2018 |
| Growth and properties of Al-rich InxAl1− xN ternary alloy grown on GaN template by metalorganic chemical vapour deposition TS Oh, JO Kim, H Jeong, YS Lee, S Nagarajan, KY Lim, CH Hong, ... Journal of Physics D: Applied Physics 41 (9), 095402, 2008 | 25 | 2008 |
| Substitutionality of nitrogen atoms and formation of nitrogen complexes and point defects in GaPN alloys H Jussila, KM Yu, J Kujala, F Tuomisto, S Nagarajan, J Lemettinen, ... Journal of Physics D: Applied Physics 47 (7), 075106, 2014 | 19 | 2014 |
| Strain-compensated GaPN/GaP heterostructure on (0 0 1) silicon substrates for intermediate band solar cells S Nagarajan, H Jussila, J Lemettinen, K Banerjee, M Sopanen, ... Journal of Physics D: Applied Physics 46 (16), 165103, 2013 | 15 | 2013 |
| Structural study of GaP layers on misoriented silicon (001) substrates by transverse scan analysis H Jussila, S Nagarajan, T Huhtio, H Lipsanen, TO Tuomi, M Sopanen Journal of Applied Physics 111 (4), 2012 | 15 | 2012 |
| Stress distribution of GaN layer grown on micro-pillar patterned GaN templates S Nagarajan, O Svensk, M Ali, G Naresh-Kumar, C Trager-Cowan, ... Applied Physics Letters 103 (1), 2013 | 14 | 2013 |
| Growth and characterization of GaP layers on silicon substrates by metal‐organic vapour phase epitaxy H Jussila, S Nagarajan, P Mattila, J Riikonen, T Huhtio, M Sopanen, ... physica status solidi c 9 (7), 1607-1609, 2012 | 14 | 2012 |
| White light generation from In-rich InAlGaN/InGaN heterostructures S Nagarajan, YS Lee, MS Kumar, OH Cha, CH Hong, EK Suh Journal of Physics D: Applied Physics 41 (1), 012001, 2007 | 13 | 2007 |
| Temperature dependent 1/f noise characteristics of the Fe/GaN ferromagnetic Schottky barrier diode A Kumar, S Nagarajan, M Sopanen, V Kumar, R Singh Semiconductor Science and Technology 30 (10), 105022, 2015 | 12 | 2015 |
| Low-temperature deposition of silicon-nitride layers by using PECVD for high efficiency Si solar cells B Karunagaran, JP Jeong, S Nagarajan, SJ Chung, EK Suh Journal of the Korean Physical Society 48 (6), 1250-1254, 2006 | 10 | 2006 |
| Al composition dependent structural and electrical properties of InAlGaN/GaN heterostructures S Nagarajan, MS Kumar, YJ Choi, SJ Chung, CH Hong, EK Suh Journal of Physics D: Applied Physics 40 (15), 4653, 2007 | 9 | 2007 |
| Non-destructive method for strain imaging in an individual GaN nanorod by confocal Raman technique NS Sopanen M Journal of Physics D: Applied Physics 49, 465303, 2016 | 8 | 2016 |
| Structural and optical properties of in-rich InAlGaN/InGaN heterostructures for white light emission S Nagarajan, TS Oh, MS Kumar, CH Hong, EK Suh Japanese journal of applied physics 47 (6R), 4413, 2008 | 8 | 2008 |
| Stress distribution in GaN nanopillars using confocal Raman mapping technique S Nagarajan, O Svensk, L Lehtola, H Lipsanen, M Sopanen Applied Physics Letters 104 (15), 2014 | 7 | 2014 |
