| Electrical spin injection and detection in molybdenum disulfide multilayer channel S Liang, H Yang, P Renucci, B Tao, P Laczkowski, S Mc-Murtry, G Wang, ... Nature communications 8 (1), 14947, 2017 | 77 | 2017 |
| Large and robust electrical spin injection into GaAs at zero magnetic field using an ultrathin CoFeB/MgO injector SH Liang, TT Zhang, P Barate, J Frougier, M Vidal, P Renucci, B Xu, ... Physical Review B 90 (8), 085310, 2014 | 77 | 2014 |
| Spin-polarized inelastic tunneling through insulating barriers Y Lu, M Tran, H Jaffrès, P Seneor, C Deranlot, F Petroff, JM George, ... Physical review letters 102 (17), 176801, 2009 | 72 | 2009 |
| Effects of a thin Mg layer on the structural and magnetoresistance properties of CoFeB∕ MgO∕ CoFeB magnetic tunnel junctions Y Lu, C Deranlot, A Vaurès, F Petroff, JM George, Y Zheng, D Demailles Applied Physics Letters 91 (22), 2007 | 69 | 2007 |
| Electric-Field Control of Spin–Orbit Torques in WS2/Permalloy Bilayers W Lv, Z Jia, B Wang, Y Lu, X Luo, B Zhang, Z Zeng, Z Liu ACS applied materials & interfaces 10 (3), 2843-2849, 2018 | 64 | 2018 |
| Influence of the growth temperature of the high-temperature AlN buffer on the properties of GaN grown on Si (1 1 1) substrate Y Lu, X Liu, X Wang, DC Lu, D Li, X Han, G Cong, Z Wang Journal of crystal growth 263 (1-4), 4-11, 2004 | 63 | 2004 |
| Ferroelectric control of organic/ferromagnetic spinterface S Liang, H Yang, H Yang, B Tao, A Djeffal, M Chshiev, W Huang, X Li, ... Advanced Materials 28 (46), 10204-10210, 2016 | 62 | 2016 |
| Design of the low-temperature AlN interlayer for GaN grown on Si (1 1 1) substrate G Cong, Y Lu, W Peng, X Liu, X Wang, Z Wang Journal of crystal growth 276 (3-4), 381-388, 2005 | 58 | 2005 |
| Long-range phase coherence in double-barrier magnetic tunnel junctions with a large thick metallic quantum well BS Tao, HX Yang, YL Zuo, X Devaux, G Lengaigne, M Hehn, D Lacour, ... Physical review letters 115 (15), 157204, 2015 | 56 | 2015 |
| Measurement of the valence-band offset at the epitaxial MgO-GaAs (001) heterojunction by x-ray photoelectron spectroscopy Y Lu, JC Le Breton, P Turban, B Lépine, P Schieffer, G Jézéquel Applied physics letters 88 (4), 2006 | 55 | 2006 |
| MgO thickness dependence of spin injection efficiency in spin-light emitting diodes Y Lu, VG Truong, P Renucci, M Tran, H Jaffrès, C Deranlot, JM George, ... Applied Physics Letters 93 (15), 2008 | 52 | 2008 |
| High speed pulsed electrical spin injection in spin-light emitting diode VG Truong, PH Binh, P Renucci, M Tran, Y Lu, H Jaffrès, JM George, ... Applied Physics Letters 94 (14), 2009 | 46 | 2009 |
| A new method to fabricate InGaN quantum dots by metalorganic chemical vapor deposition Z Chen, D Lu, H Yuan, P Han, X Liu, Y Li, X Wang, Y Lu, Z Wang Journal of crystal growth 235 (1-4), 188-194, 2002 | 46 | 2002 |
| Interfacial spin-orbit coupling: A platform for superconducting spintronics I Martínez, P Högl, C González-Ruano, JP Cascales, C Tiusan, Y Lu, ... Physical Review Applied 13 (1), 014030, 2020 | 42 | 2020 |
| Magnetization switching diagram of a perpendicular synthetic ferrimagnet CoFeB/Ta/CoFeB bilayer O Koplak, A Talantsev, Y Lu, A Hamadeh, P Pirro, T Hauet, R Morgunov, ... Journal of Magnetism and Magnetic Materials 433, 91-97, 2017 | 39 | 2017 |
| Depth analysis of boron diffusion in MgO/CoFeB bilayer by x-ray photoelectron spectroscopy Y Lu, B Lépine, G Jézéquel, S Ababou, M Alnot, J Lambert, A Renard, ... Journal of Applied Physics 108 (4), 2010 | 36 | 2010 |
| Electrical spin injection into GaAs based light emitting diodes using perpendicular magnetic tunnel junction-type spin injector BS Tao, P Barate, J Frougier, P Renucci, B Xu, A Djeffal, H Jaffrès, ... Applied Physics Letters 108 (15), 2016 | 33 | 2016 |
| Band structure of the epitaxial Fe∕ MgO∕ GaAs (001) tunnel junction studied by x-ray and ultraviolet photoelectron spectroscopies Y Lu, JC Le Breton, P Turban, B Lépine, P Schieffer, G Jézéquel Applied physics letters 89 (15), 2006 | 33 | 2006 |
| Electrical spin injection into InGaAs/GaAs quantum wells: A comparison between MgO tunnel barriers grown by sputtering and molecular beam epitaxy methods P Barate, S Liang, TT Zhang, J Frougier, M Vidal, P Renucci, X Devaux, ... Applied Physics Letters 105 (1), 2014 | 32 | 2014 |
| Investigation of GaN layer grown on Si (1 1 1) substrate using an ultrathin AlN wetting layer Y Lu, X Liu, DC Lu, H Yuan, Z Chen, T Fan, Y Li, P Han, X Wang, D Wang, ... Journal of crystal growth 236 (1-3), 77-84, 2002 | 30 | 2002 |
