| Enhancing ferroelectricity in dopant-free hafnium oxide A Pal, VK Narasimhan, S Weeks, K Littau, D Pramanik, T Chiang Applied Physics Letters 110 (2), 2017 | 203 | 2017 |
| Monolithic 3D integration of logic and memory: Carbon nanotube FETs, resistive RAM, and silicon FETs MM Shulaker, TF Wu, A Pal, L Zhao, Y Nishi, K Saraswat, HSP Wong, ... 2014 IEEE International Electron Devices Meeting, 27.4. 1-27.4. 4, 2014 | 187 | 2014 |
| Insights into the design and optimization of tunnel-FET devices and circuits A Pal, AB Sachid, H Gossner, VR Rao IEEE Transactions on Electron devices 58 (4), 1045-1053, 2011 | 135 | 2011 |
| Engineering of Ferroelectric HfO2–ZrO2 Nanolaminates SL Weeks, A Pal, VK Narasimhan, KA Littau, T Chiang ACS applied materials & interfaces 9 (15), 13440-13447, 2017 | 102 | 2017 |
| Semiconductor devices H Gossner, R Rao, A Sachid, A Pal, R Asra US Patent 8,405,121, 2013 | 84 | 2013 |
| ISFET pH sensitivity: counter-ions play a key role KB Parizi, X Xu, A Pal, X Hu, HSP Wong Scientific reports 7 (1), 41305, 2017 | 83 | 2017 |
| Crystal Phase Distribution and Ferroelectricity in Ultrathin HfO2–ZrO2 Bilayers ME McBriarty, VK Narasimhan, SL Weeks, A Pal, H Fang, TA Petach, ... physica status solidi (b) 257 (1), 1900285, 2020 | 25 | 2020 |
| Performance Improvement of One-Transistor DRAM by Band Engineering A Pal, A Nainani, S Gupta, KC Saraswat Electron Device Letters, IEEE, 1-3, 2012 | 21 | 2012 |
| Materials to systems co-optimization platform for rapid technology development targeting future generation CMOS nodes EM Bazizi, A Pal, J Kim, L Jiang, V Reddy, B Alexander, ... IEEE Transactions on Electron Devices 68 (11), 5358-5363, 2021 | 16 | 2021 |
| Impact of MOL/BEOL air-spacer on parasitic capacitance and circuit performance at 3 nm node A Pal, S Mittal, EM Bazizi, A Sachid, M Saremi, B Colombeau, G Thareja, ... 2019 International Conference on Simulation of Semiconductor Processes and …, 2019 | 14 | 2019 |
| Complementary FET device and circuit level evaluation using fin-based and sheet-based configurations targeting 3nm node and beyond L Jiang, A Pal, EM Bazizi, M Saremi, H Ren, B Alexander, ... 2020 International Conference on Simulation of Semiconductor Processes and …, 2020 | 11 | 2020 |
| Embalming with formalin–benefits and pitfalls AK Pal, UP Bhanarkar, B Ray Sch Int J Anat Physiol 5 (3), 70-77, 2022 | 10 | 2022 |
| Transistor-based apparatuses, systems and methods A Pal, A Nainani, KC Saraswat US Patent 8,969,924, 2015 | 10 | 2015 |
| Reduction of surface roughness in epitaxially grown germanium by controlled thermal oxidation WS Jung, JH Nam, A Pal, JH Lee, Y Na, Y Kim, JH Lee, KC Saraswat IEEE Electron Device Letters 36 (4), 297-299, 2015 | 9 | 2015 |
| Using modified Mach-Zehnder interferometer to get better nonlinear correction term of an isotropic nonlinear material A Pal, S Mukhopadhyay Chinese Optics Letters 7 (7), 624-626, 2009 | 8 | 2009 |
| Estrogenic activity of tree leaves as animal feed. BN Ray, AK Pal | 8 | 1966 |
| Airgap formation processes A Pal, G Thareja, S Lin, CM Hsu, NK Ingle, A Bhatnagar, A Wang US Patent 11,211,286, 2021 | 7 | 2021 |
| Electrical characterization of GaP-silicon interface for memory and transistor applications A Pal, A Nainani, Z Ye, X Bao, E Sanchez, KC Saraswat IEEE transactions on electron devices 60 (7), 2238-2245, 2013 | 6 | 2013 |
| H.. P. Wong, and S. Mitra. Monolithic 3D integration of logic and memory: Carbon nanotube FETs, resistive RAM, and silicon FETs MM Shulaker, TF Wu, A Pal, L Zhao, Y Nishi, K Saraswat Proc. Int. Electron Devices Meeting, pages 27, 1-27.4, 0 | 6 | |
| Modeling of SiC transistor with counter-doped channel PB Vyas, A Pal, S Weeks, J Holt, AK Srivastava, L Megalini, S Krishnan, ... Solid-State Electronics 200, 108548, 2023 | 5 | 2023 |
Angada SachidASMBestätigte E-Mail-Adresse bei asm.com
