Ashutosh Kumar
Title
Cited by
Cited by
Year
Enhanced Thermionic Emission and Low 1/f Noise in Exfoliated Graphene/GaN Schottky Barrier Diode
A Kumar, R Kashid, A Ghosh, V Kumar, R Singh
ACS applied materials & interfaces 8 (12), 8213-8223, 2016
342016
Temperature dependence of 1/f noise in Ni/n-GaN Schottky barrier diode
A Kumar, K Asokan, V Kumar, R Singh
Journal of Applied Physics 112 (2), 024507, 2012
282012
Effect of rapid thermal annealing on barrier height and 1/f noise of Ni/GaN Schottky barrier diodes
A Kumar, M Latzel, S Christiansen, V Kumar, R Singh
Applied Physics Letters 107 (9), 093502, 2015
262015
Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes
A Kumar, M Heilmann, M Latzel, R Kapoor, I Sharma, M Göbelt, ...
Scientific reports 6, 27553, 2016
232016
Investigation of significantly high barrier height in Cu/GaN Schottky diode
M Garg, A Kumar, S Nagarajan, M Sopanen, R Singh
AIP Advances 6 (1), 015206, 2016
172016
Temperature dependent 1/f noise characteristics of the Fe/GaN ferromagnetic Schottky barrier diode
A Kumar, S Nagarajan, M Sopanen, V Kumar, R Singh
Semiconductor Science and Technology 30 (10), 105022, 2015
102015
Direct evidence of barrier inhomogeneities at metal/AlGaN/GaN interfaces using nanoscopic electrical characterizations
A Kumar, R Kapoor, M Garg, V Kumar, R Singh
Nanotechnology 28 (26), 26LT02, 2017
82017
Understanding current transport at the Ni/GaN interface using low-frequency noise spectroscopy
A Kumar, V Kumar, R Singh
Journal of Physics D: Applied Physics 49 (47), 47LT01, 2016
72016
Comparative Analysis of Defects in Mg-Implanted and Mg-Doped GaN Layers on Freestanding GaN Substrates
A Kumar, K Mitsuishi, T Hara, K Kimoto, Y Irokawa, T Nabatame, ...
Nanoscale research letters 13 (1), 1-8, 2018
52018
Characterization of GaN nanorods fabricated using Ni nanomasking and reactive ion etching: a top-down approach
A Kumar, M Latzel, C Tessarek, S Christiansen, R Singh
Сумський державний університет, 2013
22013
Electron-Beam-Induced Current Study of Dislocations and Leakage Sites in GaN Schottky Barrier Diodes
J Chen, W Yi, A Kumar, A Iwanade, R Tanaka, S Takashima, M Edo, S Ito, ...
Journal of Electronic Materials, 1-9, 2020
2020
Atomic-scale quantitative analysis of implanted Mg in annealed GaN layers on free-standing GaN substrates
A Kumar, J Uzuhashi, T Ohkubo, R Tanaka, S Takashima, M Edo, K Hono
Journal of Applied Physics 126 (23), 235704, 2019
2019
Temperature dependent electrical studies on Cu/AlGaN/GaN Schottky barrier diodes with its microstructural characterization
M Garg, A Kumar, H Sun, CH Liao, X Li, R Singh
Journal of Alloys and Compounds 806, 852-857, 2019
2019
Study of 1/f noise characteristics in Cu/n-GaN Schottky barrier diode
M Garg, A Kumar, S Nagarajan, M Sopanen, R Singh
AIP Conference Proceedings 1731 (1), 120011, 2016
2016
Temperature dependence of 1/f noise in Gallium Nitride epitaxial layer
A Kumar, A Kumar, K Asokan, V Kumar, R Singh
Видавництво СумДУ, 2011
2011
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Articles 1–15