Direct-gap photoluminescence with tunable emission wavelength in alloys on silicon J Mathews, RT Beeler, J Tolle, C Xu, R Roucka, J Kouvetakis, ... Applied Physics Letters 97 (22), 221912, 2010 | 225 | 2010 |
Fundamental band gap and direct-indirect crossover in Ge1-x-ySixSny alloys JD Gallagher, C Xu, L Jiang, J Kouvetakis, J Menéndez Applied Physics Letters 103 (20), 202104, 2013 | 65 | 2013 |
Development of light emitting group IV ternary alloys on Si platforms for long wavelength optoelectronic applications L Jiang, C Xu, JD Gallagher, R Favaro, T Aoki, J Menéndez, J Kouvetakis Chemistry of Materials 26 (8), 2522-2531, 2014 | 56 | 2014 |
Compositional dependence of the absorption edge and dark currents in Ge1− x− y Si x Sn y/Ge (100) photodetectors grown via ultra-low-temperature epitaxy of Ge4H10, Si4H10, and SnD4 RT Beeler, C Xu, DJ Smith, G Grzybowski, J Menéndez, J Kouvetakis Applied Physics Letters 101 (22), 221111, 2012 | 51 | 2012 |
Ultra-Low-Temperature Epitaxy of Ge-based Semiconductors and Optoelectronic Structures on Si (100): Introducing Higher Order Germanes (Ge3H8, Ge4H10) G Grzybowski, L Jiang, RT Beeler, T Watkins, AVG Chizmeshya, C Xu, ... Chemistry of Materials 24 (9), 1619-1628, 2012 | 51 | 2012 |
Photoluminescence from heavily doped GeSn: P materials grown on Si (100) G Grzybowski, L Jiang, J Mathews, R Roucka, C Xu, RT Beeler, ... Applied Physics Letters 99 (17), 171910, 2011 | 51 | 2011 |
Deviations from Vegard's law in semiconductor thin films measured with X-ray diffraction and Rutherford backscattering: The Ge1-ySny and Ge1-xSix cases C Xu, CL Senaratne, RJ Culbertson, J Kouvetakis, J Menéndez Journal of Applied Physics 122 (12), 125702, 2017 | 49 | 2017 |
New strategies for Ge-on-Si materials and devices using non-conventional hydride chemistries: the tetragermane case C Xu, RT Beeler, L Jiang, G Grzybowski, AVG Chizmeshya, J Menéndez, ... Semiconductor Science and Technology 28 (10), 105001, 2013 | 45 | 2013 |
Experimental doping dependence of the lattice parameter in -type Ge: Identifying the correct theoretical framework by comparison with Si C Xu, CL Senaratne, J Kouvetakis, J Menéndez Physical Review B 93 (4), 041201, 2016 | 41 | 2016 |
Mid-infrared (3–8 μm) Ge1−ySny alloys (0.15 < y < 0.30): Synthesis, structural, and optical properties C Xu, PM Wallace, DA Ringwala, SLY Chang, CD Poweleit, J Kouvetakis, ... Applied Physics Letters 114 (21), 212104, 2019 | 39 | 2019 |
Optical properties of Ge1-x-ySixSny alloys with y> x: Direct bandgaps beyond 1550 nm C Xu, L Jiang, J Kouvetakis, J Menéndez Applied Physics Letters 103 (7), 072111, 2013 | 38 | 2013 |
Molecular Synthesis of High-Performance Near-IR Photodetectors with Independently Tunable Structural and Optical Properties Based on Si–Ge–Sn C Xu, RT Beeler, GJ Grzybowski, AVG Chizmeshya, DJ Smith, ... Journal of the American Chemical Society 134 (51), 20756-20767, 2012 | 38 | 2012 |
Non-radiative recombination in Ge1−ySny light emitting diodes: The role of strain relaxation in tuned heterostructure designs JD Gallagher, CL Senaratne, C Xu, P Sims, T Aoki, DJ Smith, J Menendez, ... Journal of Applied Physics 117 (24), 245704, 2015 | 37 | 2015 |
Synthesis and optical properties of Sn-rich Ge1–x–ySixSny materials and devices C Xu, RT Beeler, L Jiang, JD Gallagher, R Favaro, J Menendez, ... Thin Solid Films 557, 177-182, 2014 | 33 | 2014 |
Synthesis and fundamental studies of Si-compatible (Si) GeSn and GeSn mid-IR systems with ultrahigh Sn contents C Xu, D Ringwala, D Wang, L Liu, CD Poweleit, SLY Chang, HL Zhuang, ... Chemistry of Materials, 2019 | 31 | 2019 |
Ge1− x− ySixSny light emitting diodes on silicon for mid-infrared photonic applications JD Gallagher, C Xu, CL Senaratne, T Aoki, PM Wallace, J Kouvetakis, ... Journal of Applied Physics 118 (13), 135701, 2015 | 30 | 2015 |
Frustrated incomplete donor ionization in ultra-low resistivity germanium films C Xu, CL Senaratne, J Kouvetakis, J Menéndez Applied Physics Letters 105 (23), 232103, 2014 | 30 | 2014 |
Doping dependence of the optical dielectric function in n-type germanium C Xu, J Kouvetakis, J Menéndez Journal of Applied Physics 125 (8), 085704, 2019 | 26 | 2019 |
Compositional dependence of optical interband transition energies in GeSn and GeSiSn alloys C Xu, CL Senaratne, J Kouvetakis, J Menéndez Solid-State Electronics 110, 76-82, 2015 | 24 | 2015 |
Band Gap-Engineered Group-IV Optoelectronic Semiconductors, Photodiodes and Prototype Photovoltaic Devices RT Beeler, J Gallagher, C Xu, L Jiang, CL Senaratne, DJ Smith, ... ECS Journal of Solid State Science and Technology 2 (9), Q172-Q177, 2013 | 24 | 2013 |