A GaN–SiC hybrid material for high-frequency and power electronics JT Chen, J Bergsten, J Lu, E Janzén, M Thorsell, L Hultman, N Rorsman, ...
Applied Physics Letters 113 (4), 2018
98 2018 Dispersive effects in microwave AlGaN/AlN/GaN HEMTs with carbon-doped buffer S Gustafsson, JT Chen, J Bergsten, U Forsberg, M Thorsell, E Janzén, ...
IEEE Transactions on Electron Devices 62 (7), 2162-2169, 2015
79 2015 An AlGaN/GaN HEMT-based microstrip MMIC process for advanced transceiver design M Sudow, M Fagerlind, M Thorsell, K Andersson, N Billstrom, PÅ Nilsson, ...
IEEE Transactions on Microwave Theory and Techniques 56 (8), 1827-1833, 2008
78 2008 An inverse class-F GaN HEMT power amplifier with 78% PAE at 3.5 GHz P Saad, HM Nemati, M Thorsell, K Andersson, C Fager
2009 European Microwave Conference (EuMC), 496-499, 2009
75 2009 Application relevant evaluation of trapping effects in AlGaN/GaN HEMTs with Fe-doped buffer O Axelsson, S Gustafsson, H Hjelmgren, N Rorsman, H Blanck, ...
IEEE Transactions on Electron Devices 63 (1), 326-332, 2015
74 2015 Electron trapping in extended defects in microwave AlGaN/GaN HEMTs with carbon-doped buffers J Bergsten, M Thorsell, D Adolph, JT Chen, O Kordina, ...
IEEE Transactions on Electron Devices 65 (6), 2446-2453, 2018
72 2018 High-efficiency LDMOS power-amplifier design at 1 GHz using an optimized transistor model HM Nemati, C Fager, M Thorsell, H Zirath
IEEE Transactions on Microwave Theory and Techniques 57 (7), 1647-1654, 2009
63 2009 Microwave performance of ‘buffer-free’GaN-on-SiC high electron mobility transistors DY Chen, A Malmros, M Thorsell, H Hjelmgren, O Kordina, JT Chen, ...
IEEE Electron Device Letters 41 (6), 828-831, 2020
57 2020 Thermal study of the high-frequency noise in GaN HEMTs M Thorsell, K Andersson, M Fagerlind, M Sudow, PA Nilsson, N Rorsman
IEEE Transactions on Microwave Theory and Techniques 57 (1), 19-26, 2008
57 2008 An X-band AlGaN/GaN MMIC receiver front-end M Thorsell, M Fagerlind, K Andersson, N Billstrom, N Rorsman
IEEE Microwave and Wireless Components Letters 20 (1), 55-57, 2009
55 2009 Impact of channel thickness on the large-signal performance in InAlGaN/AlN/GaN HEMTs with an AlGaN back barrier A Malmros, P Gamarra, M Thorsell, H Hjelmgren, C Lacam, SL Delage, ...
IEEE Transactions on Electron Devices 66 (1), 364-371, 2018
49 2018 Fast Multiharmonic Active Load–Pull System With Waveform Measurement Capabilities M Thorsell, K Andersson
Microwave Theory and Techniques, IEEE Transactions on 60 (1), 149-157, 2012
41 2012 A Single-Ended Resistive AlGaN/GaN HEMT MMIC Mixer M Sudow, K Andersson, M Fagerlind, M Thorsell, PÅ Nilsson, N Rorsman
IEEE transactions on Microwave Theory and Techniques 56 (10), 2201-2206, 2008
41 2008 Accurate modeling of GaN HEMT RF behavior using an effective trapping potential A Prasad, M Thorsell, H Zirath, C Fager
IEEE Transactions on Microwave Theory and Techniques 66 (2), 845-857, 2017
35 2017 Electrothermal access resistance model for GaN-based HEMTs M Thorsell, K Andersson, H Hjelmgren, N Rorsman
IEEE Transactions on Electron Devices 58 (2), 466-472, 2010
34 2010 Impact of trapping effects on the recovery time of GaN based low noise amplifiers O Axelsson, N Billström, N Rorsman, M Thorsell
IEEE Microwave and wireless components letters 26 (1), 31-33, 2015
33 2015 Suppression of Dispersive Effects in AlGaN/GaN High-Electron-Mobility Transistors Using Bilayer SiNx T Huang, A Malmros, J Bergsten, S Gustafsson, O Axelsson, M Thorsell, ...
IEEE Electron Device Letters 36 (6), 537-539, 2015
32 2015 Evaluation of Thermal Versus Plasma-Assisted ALD Al2 O3 as Passivation for InAlN/AlN/GaN HEMTs A Malmros, P Gamarra, MA di Forte-Poisson, H Hjelmgren, C Lacam, ...
IEEE Electron Device Letters 36 (3), 235-237, 2015
26 2015 Hybrid measurement-based extraction of consistent large-signal models for microwave FETs I Angelov, M Thorsell, D Kuylenstierna, G Avolio, D Schreurs, A Raffo, ...
2013 European Microwave Conference, 267-270, 2013
26 2013 Performance enhancement of microwave GaN HEMTs without an AlN-exclusion layer using an optimized AlGaN/GaN interface growth process J Bergsten, JT Chen, S Gustafsson, A Malmros, U Forsberg, M Thorsell, ...
IEEE Transactions on electron devices 63 (1), 333-338, 2015
25 2015 
Niklas RorsmanResearch Professor, Chalmers University of TechnologyBestätigte E-Mail-Adresse bei chalmers.se
