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Duygu Kuzum
Duygu Kuzum
Joan and Irwin Jacobs and Kavli Foundation Endowed Faculty, ECE, University of California, San Diego
Bestätigte E-Mail-Adresse bei ucsd.edu - Startseite
Titel
Zitiert von
Zitiert von
Jahr
Nanoelectronic programmable synapses based on phase change materials for brain-inspired computing
D Kuzum, RGD Jeyasingh, B Lee, HSP Wong
Nano letters 12 (5), 2179-2186, 2012
13192012
Synaptic electronics: materials, devices and applications
D Kuzum, S Yu, HSP Wong
Nanotechnology 24 (38), 382001, 2013
12952013
An electronic synapse device based on metal oxide resistive switching memory for neuromorphic computation
S Yu, Y Wu, R Jeyasingh, D Kuzum, HSP Wong
IEEE Transactions on Electron Devices 58 (8), 2729-2737, 2011
8802011
Transparent and flexible low noise graphene electrodes for simultaneous electrophysiology and neuroimaging
D Kuzum, H Takano, E Shim, JC Reed, H Juul, AG Richardson, J De Vries, ...
Nature communications 5 (1), 5259, 2014
5682014
Artificial optic-neural synapse for colored and color-mixed pattern recognition
S Seo, SH Jo, S Kim, J Shim, S Oh, JH Kim, K Heo, JW Choi, C Choi, S Oh, ...
Nature Communications 9 (1), 5106, 2018
5642018
Bioresorbable silicon electronics for transient spatiotemporal mapping of electrical activity from the cerebral cortex
KJ Yu, D Kuzum, SW Hwang, BH Kim, H Juul, NH Kim, SM Won, K Chiang, ...
Nature materials 15 (7), 782-791, 2016
4832016
On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substrates
K Martens, CO Chui, G Brammertz, B De Jaeger, D Kuzum, M Meuris, ...
IEEE Transactions on Electron Devices 55 (2), 547-556, 2008
4532008
Transformation of cortex-wide emergent properties during motor learning
H Makino, C Ren, H Liu, AN Kim, N Kondapaneni, X Liu, D Kuzum, ...
Neuron 94 (4), 880-890. e8, 2017
2612017
N-Channel Germanium MOSFET Fabricated Below 360by Cobalt-Induced Dopant Activation for Monolithic Three-Dimensional-ICs
JH Park, D Kuzum, WS Jung, KC Saraswat
IEEE Electron Device Letters 32 (3), 234-236, 2011
2602011
Ge-interface engineering with ozone oxidation for low interface-state density
D Kuzum, T Krishnamohan, AJ Pethe, AK Okyay, Y Oshima, Y Sun, ...
IEEE Electron Device Letters 29 (4), 328-330, 2008
2362008
Brain-like associative learning using a nanoscale non-volatile phase change synaptic device array
SB Eryilmaz, D Kuzum, R Jeyasingh, SB Kim, M BrightSky, C Lam, ...
Frontiers in neuroscience 8, 205, 2014
2262014
Flexible neural electrode array based-on porous graphene for cortical microstimulation and sensing
Y Lu, H Lyu, AG Richardson, TH Lucas, D Kuzum
Scientific reports 6 (1), 1-9, 2016
2172016
Deep 2-photon imaging and artifact-free optogenetics through transparent graphene microelectrode arrays
M Thunemann, Y Lu, X Liu, K Kılıç, M Desjardins, M Vandenberghe, ...
Nature communications 9 (1), 2035, 2018
1822018
Ge (100) and (111) N- and P-FETs With High Mobility and Low-Mobility Characterization
D Kuzum, AJ Pethe, T Krishnamohan, KC Saraswat
IEEE transactions on electron devices 56 (4), 648-655, 2009
1282009
Energy-efficient Mott activation neuron for full-hardware implementation of neural networks
S Oh, Y Shi, J Del Valle, P Salev, Y Lu, Z Huang, Y Kalcheim, IK Schuller, ...
Nature nanotechnology 16 (6), 680-687, 2021
1172021
Neuroinspired unsupervised learning and pruning with subquantum CBRAM arrays
Y Shi, L Nguyen, S Oh, X Liu, F Koushan, JR Jameson, D Kuzum
Nature communications 9 (1), 5312, 2018
1172018
Device and system level design considerations for analog-non-volatile-memory based neuromorphic architectures
SB Eryilmaz, D Kuzum, S Yu, HSP Wong
2015 IEEE international electron devices meeting (IEDM), 4.1. 1-4.1. 4, 2015
1072015
High-mobility Ge N-MOSFETs and mobility degradation mechanisms
D Kuzum, T Krishnamohan, A Nainani, Y Sun, PA Pianetta, HSP Wong, ...
IEEE transactions on electron devices 58 (1), 59-66, 2010
1052010
Low-energy robust neuromorphic computation using synaptic devices
D Kuzum, RGD Jeyasingh, S Yu, HSP Wong
IEEE Transactions on Electron Devices 59 (12), 3489-3494, 2012
1012012
Interface-engineered Ge (100) and (111), N-and P-FETs with high mobility
D Kuzum, AJ Pethe, T Krishnamohan, Y Oshima, Y Sun, JP McVittie, ...
2007 IEEE International Electron Devices Meeting, 723-726, 2007
952007
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