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Luke F. Lester
Luke F. Lester
Roanoke Electric Steel Professor Emeritus
Bestätigte E-Mail-Adresse bei vt.edu
Titel
Zitiert von
Zitiert von
Jahr
Extremely low room-temperature threshold current density diode lasers using InAs dots in In0.15Ga0.85As quantum well
GT Liu, A Stintz, H Li, KJ Malloy, LF Lester
Electronics Letters 35 (14), 1163-1165, 1999
6521999
Gain and linewidth enhancement factor in InAs quantum-dot laser diodes
TC Newell, DJ Bossert, A Stintz, B Fuchs, KJ Malloy, LF Lester
IEEE Photonics Technology Letters 11 (12), 1527-1529, 2002
3842002
Optical characteristics of 1.24-μm InAs quantum-dot laser diodes
LF Lester, A Stintz, H Li, TC Newell, EA Pease, BA Fuchs, KJ Malloy
IEEE Photonics Technology Letters 11 (8), 931-933, 1999
2911999
Room-temperature operation of InAs quantum-dash lasers on InP [001]
RH Wang, A Stintz, PM Varangis, TC Newell, H Li, KJ Malloy, LF Lester
IEEE Photonics Technology Letters 13 (8), 767-769, 2001
2842001
GaSb∕ GaAs type II quantum dot solar cells for enhanced infrared spectral response
RB Laghumavarapu, A Moscho, A Khoshakhlagh, M El-Emawy, LF Lester, ...
Applied Physics Letters 90 (17), 2007
2532007
Transition dipole moment of InAs/InGaAs quantum dots from experiments on ultralow-threshold laser diodes
PG Eliseev, H Li, A Stintz, GT Liu, TC Newell, KJ Malloy, LF Lester
Applied Physics Letters 77 (2), 262-264, 2000
2452000
Passive mode-locking in 1.3 μm two-section InAs quantum dot lasers
X Huang, A Stintz, H Li, LF Lester, J Cheng, KJ Malloy
Applied Physics Letters 78 (19), 2825-2827, 2001
2312001
Improved device performance of InAs∕ GaAs quantum dot solar cells with GaP strain compensation layers
RB Laghumavarapu, M El-Emawy, N Nuntawong, A Moscho, LF Lester, ...
Applied Physics Letters 91 (24), 2007
2162007
The influence of quantum-well composition on the performance of quantum dot lasers using InAs-InGaAs dots-in-a-well (DWELL) structures
GT Liu, A Stintz, H Li, TC Newell, AL Gray, PM Varangis, KJ Malloy, ...
IEEE Journal of Quantum Electronics 36 (11), 1272-1279, 2000
2072000
Low-threshold current density 1.3-μm InAs quantum-dot lasers with the dots-in-a-well (DWELL) structure
A Stintz, GT Liu, H Li, LF Lester, KJ Malloy
IEEE Photonics Technology Letters 12 (6), 591-593, 2000
1952000
Single-mode GaN nanowire lasers
Q Li, JB Wright, WW Chow, TS Luk, I Brener, LF Lester, GT Wang
Optics express 20 (16), 17873-17879, 2012
1852012
Low-threshold quantum dot lasers with 201 nm tuning range
PM Varangis, H Li, GT Liu, TC Newell, A Stintz, B Fuchs, KJ Malloy, ...
Electronics Letters 36 (18), 1544-1545, 2000
1842000
Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers
PG Eliseev, H Li, T Liu, TC Newell, LF Lester, KJ Malloy
IEEE Journal of Selected Topics in Quantum Electronics 7 (2), 135-142, 2002
1432002
Nonalloyed Ti/Al Ohmic contacts to n‐type GaN using high‐temperature premetallization anneal
LF Lester, JM Brown, JC Ramer, L Zhang, SD Hersee, JC Zolper
Applied physics letters 69 (18), 2737-2739, 1996
1421996
InAs Quantum dot DFB lasers on GaAs for uncooled 1310nm fiber communication
L Zhang, R Wang, Z Zou, A Gray, L Olona, T Newell, D Webb, P Varangis, ...
Optical Fiber Communication Conference, FG2, 2003
135*2003
Dynamic properties of quantum dot distributed feedback lasers: high speed, linewidth and chirp
H Su, LF Lester
Journal of Physics D: Applied Physics 38 (13), 2112, 2005
1282005
High-performance InAs quantum-dot lasers near 1.3 μm
Y Qiu, P Gogna, S Forouhar, A Stintz, LF Lester
Applied Physics Letters 79 (22), 3570-3572, 2001
1262001
Microwave performance of a quarter-micrometer gate low-noise pseudomorphic InGaAs/AlGaAs modulation-doped field effect transistor
T Henderson, MI Aksun, CK Peng, H Morkoc, PC Chao, PM Smith, ...
IEEE electron device letters 7 (12), 649-651, 1986
1261986
Gain Compression and Above-Threshold Linewidth Enhancement Factor in 1.3-InAs–GaAs Quantum-Dot Lasers
F Grillot, B Dagens, JG Provost, H Su, LF Lester
IEEE Journal of Quantum Electronics 44 (10), 946-951, 2008
1222008
Ultra-low-noise cryogenic high-electron-mobility transistors
KHG Duh, MW Pospieszalski, WF Kopp, P Ho, AA Jabra, PC Chao, ...
IEEE transactions on electron devices 35 (3), 249-256, 1988
1041988
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