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Laurent Dupont
Laurent Dupont
Universite Gustave Eiffeil - Laboratoire SATIE (UMR CNRS)
Bestätigte E-Mail-Adresse bei univ-eiffel.fr
Titel
Zitiert von
Zitiert von
Jahr
Temperature measurement of power semiconductor devices by thermo-sensitive electrical parameters—A review
Y Avenas, L Dupont, Z Khatir
IEEE transactions on power electronics 27 (6), 3081-3092, 2011
5812011
Comparison of junction temperature evaluations in a power IGBT module using an IR camera and three thermosensitive electrical parameters
L Dupont, Y Avenas, PO Jeannin
IEEE Transactions on Industry Applications 49 (4), 1599-1608, 2013
2642013
Improved Reliability of Power Modules: A Review of Online Junction Temperature Measurement Methods
N Baker, M Liserre, L Dupont, Y Avenas
Industrial Electronics Magazine, IEEE 8 (3), 17-27, 2014
2452014
IGBT junction temperature measurement via peak gate current
N Baker, S Munk-Nielsen, F Iannuzzo, M Liserre
IEEE Transactions on Power Electronics 31 (5), 3784-3793, 2015
1542015
Effects of metallization thickness of ceramic substrates on the reliability of power assemblies under high temperature cycling
L Dupont, Z Khatir, S Lefebvre, S Bontemps
Microelectronics Reliability 46 (9-11), 1766-1771, 2006
1442006
Condition monitoring: A decade of proposed techniques
Y Avenas, L Dupont, N Baker, H Zara, F Barruel
IEEE Industrial Electronics Magazine 9 (4), 22-36, 2015
1192015
Degradation behavior of 600 V–200 A IGBT modules under power cycling and high temperature environment conditions
M Bouarroudj, Z Khatir, JP Ousten, F Badel, L Dupont, S Lefebvre
Microelectronics Reliability 47 (9-11), 1719-1724, 2007
1122007
IR Camera Validation of IGBT Junction Temperature Measurement via Peak Gate Current
N Baker, L Dupont, S Munk-Nielsen, F Iannuzzo, M Liserre
IEEE Transactions on Power Electronics, 2016
1062016
Junction temperature measurements via thermo-sensitive electrical parameters and their application to condition monitoring and active thermal control of power converters
N Baker, M Liserre, L Dupont, Y Avenas
IECON 2013-39th Annual Conference of the IEEE Industrial Electronics Society …, 2013
692013
Preliminary Evaluation of Thermo-Sensitive Electrical Parameters Based on the Forward Voltage for On-line Chip Temperature Measurements of IGBT Devices
L Dupont, Y Avenas
IEEE Transactions on Industry Applications, 1-24, 2015
632015
Investigations on junction temperature estimation based on junction voltage measurements
Z Khatir, L Dupont, A Ibrahim
Microelectronics Reliability 50 (9-11), 1506-1510, 2010
612010
Investigation of the heel crack mechanism in Al connections for power electronics modules
Y Celnikier, L Benabou, L Dupont, G Coquery
Microelectronics reliability 51 (5), 965-974, 2011
562011
Contribution à l'étude de la durée de vie des assemblages de puissance dans des environnements haute température et avec des cycles thermiques de grande amplitude
L Dupont
École normale supérieure de Cachan-ENS Cachan, 2006
492006
Evaluation of IGBT thermo-sensitive electrical parameters under different dissipation conditions–Comparison with infrared measurements
Y Avenas, L Dupont
Microelectronics Reliability 52 (11), 2617-2626, 2012
482012
Evaluation of thermo-sensitive electrical parameters based on the forward voltage for on-line chip temperature measurements of IGBT devices
L Dupont, Y Avenas
2014 IEEE Energy Conversion Congress and Exposition (ECCE), 4028-4035, 2014
462014
Evaluation of substrate technologies under high temperature cycling
L Dupont, S Lefebvre, Z Khatir, S Bontemps
4th International Conference on Integrated Power Systems, 1-6, 2006
382006
Direct Copper Bonding for Power Interconnects: Design, Manufacturing, and Test
B Mouawad, B Thollin, C Buttay, L Dupont, V Bley, D Fabregue, ...
Components, Packaging and Manufacturing Technology, IEEE Transactions on 5 …, 2014
292014
Ageing test results of low voltage MOSFET modules for electrical vehicles
L Dupont, S Lefebvre, M Bouaroudj, Z Khatir, JC Faugieres, F Emorine
2007 European Conference on Power Electronics and Applications, 1-10, 2007
292007
Failure modes on low voltage power MOSFETs under high temperature application
L Dupont, S Lefebvre, M Bouaroudj, Z Khatir, JC Faugières
Microelectronics reliability 47 (9-11), 1767-1772, 2007
282007
Comparison of stress distributions and failure modes during thermal cycling and power cycling on high power IGBT modules
M Bouarroudj, Z Khatir, JP Ousten, L Dupont, S Lefebvre, F Badel
2007 European Conference on Power Electronics and Applications, 1-10, 2007
232007
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